The effect of dopant distribution and built-in electric field on the transit time of a transistor

This publication has 8 references indexed in Scilit:

• The effect of doping-dependent mobility on base transit time in transistors
  Solid-State Electronics, 1975
• Electron mobility empirically related to the phosphorus concentration in silicon
  Solid-State Electronics, 1975
• On the variation of cut-off frequency at high injection level with emitter end concentration of a diffused base transistor
  Solid-State Electronics, 1974
• Transit time in the base region of drift transistors considering recombination and variable mobility
  Solid-State Electronics, 1974
• On the variation of cut-off frequency with emitter end concentration of a diffused base transistor
  Solid-State Electronics, 1973
• Transition-capacitance calculations for double-diffused p-n junctions
  Solid-State Electronics, 1973
• Optimum doping distribution for minimum base transit time
  IEEE Transactions on Electron Devices, 1967
• Carrier mobilities in silicon empirically related to doping and field
  Proceedings of the IEEE, 1967