The effect of growth temperature and impurity doping on composition of LPE InGaAsP on InP
- 31 July 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 58 (2) , 387-392
- https://doi.org/10.1016/0022-0248(82)90286-x
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
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- Tunneling involving defects in LPE In1−xGaxP1−zAsz(x∼0.12, z∼0.26) double-heterojunction lasersApplied Physics Letters, 1977
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977
- Fast pulse behaviour of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μmElectronics Letters, 1977
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE ApparatusJapanese Journal of Applied Physics, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976