Rhodium and iridium as deep impurities in silicon

This publication has 5 references indexed in Scilit:

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  Solid-State Electronics, 1975
• Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique
  Solid-State Electronics, 1974
• Quenched-in centers in silicon p+n junctions
  Solid-State Electronics, 1974
• Determination of deep energy levels in Si by MOS techniques
  Applied Physics Letters, 1972
• Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
  Solid-State Electronics, 1970