Microstructure of Passivated Al-Cu and Al-Si-Cu Conductor Lines: Interaction of Precipitates, Defects and Mechanical Stresses
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electromigration failure mechanisms in bamboo-grained Al(Cu) interconnectionsThin Solid Films, 1995
- The Influence of Tiw Barrier Layer on Reliability of AlCu and AlSiCu InterconnectsMRS Proceedings, 1995
- Stress-Voiding and Electromigration in Multilevel InterconnectsMRS Proceedings, 1995
- The Effect of Cu Distribution on Post-Patterning Grain Growth and Reliability of Al-1%Cu InterconnectsMRS Proceedings, 1995
- Analysis of stress-induced void growth mechanisms in passivated interconnect linesJournal of Applied Physics, 1993
- Strain Relaxation and In-Situ Observation of Voiding in Passivated Aluminum Alloy Lines.MRS Proceedings, 1993
- Stress and current induced voiding in passivated metal linesThin Solid Films, 1992
- Reliability, Properties and Microstructure of W80Ti20 Diffusion Barriers Between Al-Based Metallizations and Si.MRS Proceedings, 1992
- Mechanical stress as a function of temperature in aluminum filmsIEEE Transactions on Electron Devices, 1988
- Imperfections in CrystalsPhysics Today, 1961