High-power broad-area lasers fabricated by selective area growth
- 1 November 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9) , 3984-3986
- https://doi.org/10.1063/1.339199
Abstract
High-power broad-area stripe lasers have been fabricated by using a one-step selective area growth technique in the metalorganic chemical vapor deposition system. This technique provides devices with excellent control both on electrical and optical confinements. cw output power of more than 350 mW/facet (700 mW total) was achieved, and a differential quantum efficiency of 0.625 mW/mA/facet (1.25 mW/mA total) was observed.This publication has 6 references indexed in Scilit:
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