Analysis of porous silicon silicon-on-insulator materials
- 1 May 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 56-57, 855-859
- https://doi.org/10.1016/0168-583x(91)95046-g
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High-performance thin-film silicon-on-insulator CMOS transistors in porous anodized siliconIEEE Electron Device Letters, 1989
- SOI technology using buried layers of oxidized porous SiIEEE Circuits and Devices Magazine, 1987
- Recent advances in solid-phase epitaxial recrystallization of SOS with applications to CMOS and bipolar devicesIEEE Circuits and Devices Magazine, 1987
- Electrical and radiation characterization of three SOI material technologiesIEEE Circuits and Devices Magazine, 1987
- Characteristics of SOI CMOS circuits made in n/n + /n oxidised porous silicon structuresElectronics Letters, 1986
- Tungsten deposition on porous silicon for formation of buried conductors in single crystal siliconApplied Physics Letters, 1986
- Computer simulation programs for nuclear reaction analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Use of deutron-induced nuclear reactions for quantitative surface analysisSurface and Coatings Technology, 1986
- Analysis of porous siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Determination of the fluorine distribution in porous silicon using nuclear reaction, XPS and Auger analyses.Nuclear Instruments and Methods in Physics Research, 1983