Anomalous positive charge formation by atomic hydrogen exposure
- 1 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4) , 15-18
- https://doi.org/10.1016/0167-9317(95)00006-t
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Interface defect formation in MOSFETs by atomic hydrogen exposureIEEE Transactions on Nuclear Science, 1994
- The role of border traps in MOS high-temperature postirradiation annealing responseIEEE Transactions on Nuclear Science, 1993
- Experimental evidence of two species of radiation induced trapped positive chargeIEEE Transactions on Nuclear Science, 1993
- Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogenApplied Physics Letters, 1993
- Positive charge generation in metal-oxide-semiconductor capacitorsJournal of Applied Physics, 1991
- The nature of the trapped hole annealing processIEEE Transactions on Nuclear Science, 1989
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979