Interfacial gate resistance in Schottky-barrier-gate field-effect transistors
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (12) , 2407-2416
- https://doi.org/10.1109/16.735716
Abstract
We discuss in depth a previously overlooked component in the gate resistance R/sub g/ of Schottky-Barrier-Gate FETs, in particular, 0.1-/spl mu/m gate-length AlInAs/GaInAs MODFETs. The high-frequency noise and power gain of these FETs depend critically on R/sub g/. This has been the motivation for the development of T-gates that keep the gate finger metallization resistance R/sub ga/ (proportional to the gate width W/sub g/) low, even for very short gate length L/sub g/. R/sub ga/ increases with frequency due to the skin effect, but our three-dimensional (3-D) numerical modeling shows conclusively that this effect is negligible. We show that the always "larger-than-expected" R/sub g/ is instead caused by a component R/sub gi/ that scales inversely with W/sub g/. We interpret R/sub gi/ as a metal-semiconductor interfacial gate resistance. The dominance of R/sub gi/ profoundly affects device optimization and model scaling. For GaAs and InP-based SBGFETs, there appears to exist a smallest practically achievable normalized interfacial gate resistance r/sub gi/ on the order of 10/sup -7/ /spl Omega/ cm/sup 2/.Keywords
This publication has 21 references indexed in Scilit:
- Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Dispersion and tunneling analysis of the interfacial gate resistance in Schottky barriersPhysical Review B, 1999
- Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiersIEE Proceedings - Microwaves, Antennas and Propagation, 1996
- Novel high-yield trilayer resist process for 0.1 μm T-gate fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Limits of nano-gate fabricationProceedings of the IEEE, 1991
- Edge condition of the field and a.c. resistance of a rectangular strip conductorIEE Proceedings H Microwaves, Antennas and Propagation, 1990
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Power Gain in Feedback AmplifierTransactions of the IRE Professional Group on Circuit Theory, 1954