Enhanced barrier height of AuIn1−xGaxAsyP1−y Schottky diodes
- 1 April 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (4) , 297-300
- https://doi.org/10.1016/0038-1101(81)90020-4
Abstract
No abstract availableKeywords
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