Effects of electropolishing on the tunneling current in aluminum-aluminum-oxide-aluminum diodes
- 1 January 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (1) , 1-2
- https://doi.org/10.1063/1.1654452
Abstract
The electropolishing of Al–Al2O3–Al structures using low‐frequency (50 Hz) alternating current has been experimentally investigated. It is found that, by polishing, the tunnel film thickness could be increased up to 40% without changing the electrical capacitance of the film.Keywords
This publication has 8 references indexed in Scilit:
- Method for Doping Thin Insulating Films and the Comparison between the Electrical Characteristics of Undoped and Doped FilmsJournal of Applied Physics, 1971
- Thickness study of thermally oxidized and anonized thin Al2O3 filmsThin Solid Films, 1969
- Thickness fluctuations and electric field penetration in thin metal-insulator-metal structuresSolid-State Electronics, 1968
- Tunnel and Sehottky Current in Dielectric Thin Films Considering Film Thickness FluctuationsPhysica Status Solidi (b), 1967
- Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currentsSolid-State Electronics, 1966
- INTERPRETATION OF TUNNEL EMISSION AND CAPACITANCE MEASUREMENTS IN THE PRESENCE OF DIELECTRIC FILM-THICKNESS FLUCTUATIONSApplied Physics Letters, 1966
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963
- Effect of Insulating-Film-Thickness Nonuniformity on Tunnel CharacteristicsJournal of Applied Physics, 1963