Effect of electron traps on reversibility of annealing
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (6) , 1750-1757
- https://doi.org/10.1109/23.488775
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Evidence for two types of radiation-induced trapped positive chargeIEEE Transactions on Nuclear Science, 1994
- Microscopic nature of border traps in MOS oxidesIEEE Transactions on Nuclear Science, 1994
- Experimental evidence of two species of radiation induced trapped positive chargeIEEE Transactions on Nuclear Science, 1993
- Three-point method of prediction of MOS device response in space environmentsIEEE Transactions on Nuclear Science, 1993
- Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate InsulatorsJournal of the Electrochemical Society, 1991
- Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devicesJournal of Applied Physics, 1990
- Post-Irradiation Effects in Field-Oxide Isolation StructuresIEEE Transactions on Nuclear Science, 1987
- A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device CharacteristicsIEEE Transactions on Nuclear Science, 1984
- Mosfet and MOS Capacitor Responses to Ionizing RadiationIEEE Transactions on Nuclear Science, 1984
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983