Three-point method of prediction of MOS device response in space environments
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1714-1720
- https://doi.org/10.1109/23.273488
Abstract
A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified.This publication has 22 references indexed in Scilit:
- Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET)IEEE Transactions on Nuclear Science, 1991
- Post-irradiation behavior of the interface state density and the trapped positive chargeIEEE Transactions on Nuclear Science, 1990
- The nature of the trapped hole annealing processIEEE Transactions on Nuclear Science, 1989
- Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environmentsIEEE Transactions on Nuclear Science, 1988
- Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETsIEEE Transactions on Nuclear Science, 1988
- Generic impulse response function for MOS systems and its application to linear response analysisIEEE Transactions on Nuclear Science, 1988
- A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of MicroelectronicsIEEE Transactions on Nuclear Science, 1987
- Saturation of Threshold Voltage Shift in MOSFET's at High Total DoseIEEE Transactions on Nuclear Science, 1986
- Characterization of Annealing of Co60 Gamma-Ray Damage at the Si/Si02 InterfaceIEEE Transactions on Nuclear Science, 1983
- Predicting CMOS Inverter Response in Nuclear and Space EnvironmentsIEEE Transactions on Nuclear Science, 1983