Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy
- 1 November 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 41 (2) , 201-205
- https://doi.org/10.1016/s0921-5107(96)01662-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Elaboration and characterization of InAsSb grown on GaSb and GaAs substratesJournal of Crystal Growth, 1995
- Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphireApplied Physics Letters, 1995
- Optical and electrical characterization of thick GaSb buffer layers grown on 2 in GaAs wafersMaterials Science and Engineering: B, 1994
- Molecular beam epitaxy grown AlAsSb/GaAsSb distributed Bragg reflector on InP substrate operating near 1.55 μmJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Electrical and optical properties of heavily n-doped GaSb–AlSb multiquantum well structures for infrared photodetector applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μmApplied Physics Letters, 1994
- Defect evaluation and electrical characteristics of GaSb and In0.17Ga0.83Sb films grown by molecular beam epitaxyPhysica Status Solidi (a), 1994
- Electroluminescence out to 2.1 mu m observed in GaSb/InxGa1-xSb quantum wells grown by MOVPESemiconductor Science and Technology, 1994
- Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPEIEEE Journal of Quantum Electronics, 1993
- Hole transport in gallium antimonideJournal of Applied Physics, 1985