Growth of ternary In0.14Ga0.86As bulk crystal with uniform composition at constant temperature through GaAs supply
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 723-727
- https://doi.org/10.1016/0022-0248(91)90834-r
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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