Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation

This publication has 19 references indexed in Scilit:

• Performance of n+-p-p+ silicon solar cells fabricated through masked ion implantation
  Solar Cells, 1985
• On approaches to the built-in electric-field calculations in shallow silicon n⁺-p junctions
  IEEE Electron Device Letters, 1985
• Effect of the annealing conditions on the electrical characteristics of p⁺/n shallow junctions
  IEEE Electron Device Letters, 1984
• Shallow boron junctions implanted in silicon through a surface oxide
  IEEE Electron Device Letters, 1984
• Annealing of shallow (R_p∼ 20-nm) boron-implanted layers in silicon using electron beams
  IEEE Electron Device Letters, 1984
• Characteristics of an all-implanted p⁺-n-n⁺solar cell
  IEEE Electron Device Letters, 1984
• A current-generating BSF silicon solar cell fabricated through masked ion implantation
  IEEE Electron Device Letters, 1983
• The spectral response of BSF silicon solar cells fabricated through masked ion implantation
  IEEE Electron Device Letters, 1983
• Silicon photovoltaic cells
  Solid-State Electronics, 1981
• A study of the factors which control the efficiency of ion-implanted silicon solar cells
  IEEE Transactions on Electron Devices, 1980