Photoluminescence study on local atomic arrangements in InGaP and GaAsP alloys using Co deep impurity

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Abstract
Low‐temperature photoluminescence (PL) related to Co deep impurities in In1−x GaxP (0.74≤x≤1) and GaAs1−x Px (0.65≤x≤1) alloys has been studied. Broad PL bands with some structures have been observed in the 2.3‐μm region for both the alloys. The results of time‐resolved PL measurements have shown that the PL bands are due to the intracenter transitions 4T2(4F)→4A2(4F) in a substitutional Co2+ ion in the zinc‐blende lattices. These Co‐related PL spectra have been analyzed in terms of the local atomic arrangements around the Co luminescent center. As a result, it has been found that these Co‐related PL spectra in InGaP and GaAsP alloys are composed of several bands closely related to the local arrangement of atoms around the Co center.