Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping

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Abstract
Low threshold 1.3 μm InGaAsP/InP double heterostructure lasers were fabricated using all gas source chemical beam epitaxy (CBE). Gas source doping of n‐ and p‐type InP and InGaAs was successfully achieved using tetraethyltin and diethylzinc. The minimum threshold current density (Jth) for a 1800 μm cavity length laser was 680 A/cm−2. This is lowest Jth value reported for CBE grown double heterostructure lasers at 1.3 μm. These lasers exhibited an internal quantum efficiency (ηi) and internal loss (αi) of 51% and 16 cm−1, respectively. The temperature dependence of the threshold current is described by a single exponential T0 of 51 K.