Transmission electron microscopic observation of defects in heavily doped LPE InGaAsP layers with Zn, Cd, Sn and Te
- 1 July 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 62 (2) , 329-342
- https://doi.org/10.1016/0022-0248(83)90311-1
Abstract
No abstract availableKeywords
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