Contact resistance to high-mobility AlGaAs/GaAs heterostructures

1 August 1992

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 7 (8) , 1085-1090
https://doi.org/10.1088/0268-1242/7/8/010

Abstract

The authors report an investigation of contact resistance to high-mobility 2DEG structures ( approximately 1*10⁶ cm² V^-1 s^-1) as a function of temperature (30-300 K) and magnetic field (0-0.6 T). The transmission line model (TLM) and the two-layer TLM of Look (1988, 1989) are used to evaluate to evaluate the contact resistance. The calculated specific contact resistance shows a strong temperature dependence, with both thermionic and tunnelling behaviour. The vestiges of an interface remain below the contact region. Using the two-layer TLM analysis, the degree of parallel conduction in the samples is obtained.

Keywords

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