Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
- 1 May 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (5) , 442-445
- https://doi.org/10.1007/s11664-998-0175-3
Abstract
No abstract availableKeywords
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