Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 255-257
- https://doi.org/10.1016/0022-0248(93)90616-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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