Molecular beam epitaxy of CdTe and CdxHg1−xTe on InSb
- 1 August 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 130 (3-4) , 327-333
- https://doi.org/10.1016/0040-6090(85)90363-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1984
- CdTe films on (001) GaAs:Cr by molecular beam epitaxyApplied Physics Letters, 1984
- Heteroepitaxial growth of CdTe on GaAs by laser assisted depositionApplied Physics Letters, 1983
- Growth of CdTe films on silicon by molecular beam epitaxyJournal of Applied Physics, 1983
- Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Growth of CdTe films on sapphire by molecular beam epitaxyApplied Physics Letters, 1983
- Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxyJournal of Applied Physics, 1982
- Molecular Beam Epitaxy of In-Doped CdTeJapanese Journal of Applied Physics, 1982
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981
- Molecular beam epitaxy of II–VI compounds: CdxHg1−xTeJournal of Crystal Growth, 1981