Two-dimensional magnetotransport in AlAs quantum wells
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (17) , 9349-9352
- https://doi.org/10.1103/physrevb.35.9349
Abstract
We have made magnetotransport measurements on two-dimensional electronic systems confined to AlAs by As. We have determined the effective mass (=0.49), the effective g factor (3.1), and the relaxation time. Even though the lattice constants of GaAs and AlAs are nearly equal, the stress arising from this small mismatch strongly influences the electronic properties of AlAs. For [111]-oriented samples the valley degeneracy is one, and there is an anomalous phase shift in the Shubnikov–de Haas oscillations.
Keywords
This publication has 20 references indexed in Scilit:
- Electronic transport in molecular-beam-epitaxy-grownAsPhysical Review B, 1986
- Modulation-doped (Al,Ga)As/AlAs superlattice: Electron transfer into AlAsApplied Physics Letters, 1985
- Effect of biaxial stress on Si(100) inversion layersSurface Science, 1980
- Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)Physical Review Letters, 1979
- Stress and intersubband correlation in the silicon inversion layerSurface Science, 1978
- Effective mass and collision time of (100) Si surface electronsPhysical Review B, 1977
- Electronic Structure of Inversion Layers in Many-Valley SemiconductorsPhysical Review Letters, 1976
- Surface quantum oscillations in (110) and (111) n-type silicon inversion layersSolid State Communications, 1975
- Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of SiPhysics Letters A, 1975
- Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. IV. Oscillatory ConductivityJournal of the Physics Society Japan, 1974