Variational calculation of the two-dimensionalmolecule
- 1 September 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 32 (3) , 1870-1872
- https://doi.org/10.1103/physreva.32.1870
Abstract
The ground-state energy of the two-dimensional (2D) hydrogen molecule has been calculated using a Heitler-London-Rosen-type variational calculation. The value of the dissociation energy is found to be 2.5 Ry. For the interatomic distance R=0, the variational parameter , corresponding to a 2D He atom. For the sake of comparison, the results of the 3D case are also recalculated. Special interest arises from the Slater integrals, which are rather difficult to obtain in the 2D case.
Keywords
This publication has 16 references indexed in Scilit:
- Two-dimensional impurity bands at semiconductor heterostructure interfacesPhysical Review B, 1984
- Two-dimensional density of states for electrons bound to impurities inside inversion layers at the semiconductor-insulator interfaceSurface Science, 1983
- Electron hopping energy influence on the specific heat of phosphorus‐doped siliconPhysica Status Solidi (b), 1983
- Doped semiconductor as an amorphous antiferromagnetPhysical Review B, 1982
- A cluster model for amorphous antiferromagnetismPhilosophical Magazine Part B, 1981
- The impurity resistivity of In-doped CdSJournal of Physics C: Solid State Physics, 1980
- Generalized Matsubara-Toyozawa theory for the specific heat in heavily-phosphorus-doped siliconPhysical Review B, 1979
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Metal-to-non-metal transitions in doped germanium and siliconPhilosophical Magazine, 1973
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967