The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation
- 19 April 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (16) , 3031-3033
- https://doi.org/10.1063/1.1705731
Abstract
The surface of strained InGaAsfilms for selective regrowth of InAsnanostructures is investigated by atomic force microscopy and Rutherford backscattering. 3.3-nm-thick In 0.33 Ga 0.67 As films were annealed at temperatures between 400 and 800 ° C . Significant indium desorption was found to occur at temperatures above 550 ° C . The optimum parameters are presented for selective growth of InAsquantum dots having densities of 6.6×10 10 cm −2 on In 0.33 Ga 0.67 As films.Keywords
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