Photoluminescence excitation spectra of nitrogen-implanted AlxGa1−xAs
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4) , 1628-1630
- https://doi.org/10.1063/1.323844
Abstract
Photoluminescence excitation spectra have been measured for the nitrogen‐implanted AlxGa1−xAs at 2 °K, because PLE spectroscopy has versatility for ion‐implanted specimens. The results show that the absorption bands due to nitrogen isoelectronic impurities are formed below the Γ1 conduction‐band minimum even in the indirect composition range, while the emission bands due to nitrogen impurities are situated below the X1 conduction‐band minima.This publication has 15 references indexed in Scilit:
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