H− beam based projection microlithography: A conceptual study of the beam parametersa)
- 1 May 1994
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 65 (5) , 1745-1748
- https://doi.org/10.1063/1.1144870
Abstract
The current trends of research and development work in ion-beam microlithography are examined with particular emphasis on the choice of ion sources and the beam parameters. The common approach with duoplasmatron-type ion sources for projection ion-beam lithography is revisited, and the suitability of H− beams is examined. The beam brightness and energy spread, which constitute the figure of merit of a beam, appear to be better in the case of H− beams. From a surface plasma source type discharge operating under stable condition, H− beams with an emission current density of ∼1–5 A/cm2 and a normalized brightness of ∼7×1012 A/(m rad)2 can be extracted. Several key issues of an ion-projection lithography device, such as the ion source parameters, beam optics, and thermal load are discussed.Keywords
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