Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme
- 1 January 2002
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substratesSolid-State Electronics, 2002
- Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy maskingApplied Physics Letters, 2002
- Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxyApplied Physics Letters, 2001
- Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor depositionApplied Physics Letters, 2001
- AlGaN/GaN high electron mobility transistors on Si(111) substratesIEEE Transactions on Electron Devices, 2001
- Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurementJournal of Applied Physics, 2001
- Residual stress in GaN epilayers grown on silicon substratesJournal of Vacuum Science & Technology A, 2000
- A simple reflectance method for estimation of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructuresApplied Physics Letters, 1999