A numerical analysis for the small-signal response of the MOS capacitor
- 31 March 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (3) , 207-213
- https://doi.org/10.1016/0038-1101(89)90093-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Analysis of MOSFET Capacitances and Their Behavior at Short-Channel Lengths Using an AC Device SimulatorIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1987
- TIME PERTURBATION ANALYSIS FOR THE MOS SYSTEMCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1987
- Modeling MOS capacitors to extract Si—SiO2interface trap densities in the presence of arbitrary doping profilesIEEE Transactions on Electron Devices, 1986
- Techniques for Small-Signal Analysis of Semiconductor DevicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
- A charge-oriented model for MOS transistor capacitancesIEEE Journal of Solid-State Circuits, 1978
- An efficient numerical method for the small-signal AC analysis of MOS capacitorsIEEE Transactions on Electron Devices, 1977
- Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity responseSolid-State Electronics, 1973
- A two-dimensional numerical FET model for DC, AC, and large-signal analysisIEEE Transactions on Electron Devices, 1973
- Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysisSolid-State Electronics, 1969
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969