Surface, interface and valence band structures of ultra-thin silicon oxides

This publication has 25 references indexed in Scilit:

• Correlation between Surface Microroughness of Silicon Oxide Film and SiO₂/Si Interface Structure
  Japanese Journal of Applied Physics, 1997
• Simultaneous imaging of Si(111) 7×7 with atomic resolution in scanning tunneling microscopy, atomic force microscopy, and atomic force microscopy noncontact mode
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
• Determination of Valence Band Alignment at Ultrathin SiO₂/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
  Japanese Journal of Applied Physics, 1995
• Si2pCore-Level Shifts at the Si(001)-SiO2Interface: A First-Principles Study
  Physical Review Letters, 1995
• Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2×1 Surface
  Japanese Journal of Applied Physics, 1995
• Chemical Structures of the SiO₂Si Interface
  Critical Reviews in Solid State and Materials Sciences, 1995
• Cleaning and Oxidation of Heavily Doped Si Surfaces
  MRS Proceedings, 1992
• Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF
  Applied Physics Letters, 1991
• Elucidation of the initial stages of the oxidation of silicon (111) using scanning tunneling microscopy and spectroscopy
  The Journal of Physical Chemistry, 1990
• Photoemission of Electrons from Silicon into Silicon Dioxide
  Physical Review B, 1965