Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
- 9 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (19) , 2799-2801
- https://doi.org/10.1063/1.122594
Abstract
No abstract availableKeywords
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