Fracture of AlxGa1-xN/GaN Heterostructure –Compositional and Impurity Dependence–
- 1 March 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (3A) , L195
- https://doi.org/10.1143/jjap.40.l195
Abstract
Grown-in stress and subsequent fracture in Al x Ga1-x N/GaN heterostructures with or without impurity doping were studied in situ. It was found that the critical thickness of Al x Ga1-x N depends not only on its composition but also on the concentration of impurities such as Si or Mg. Increase in tensile stress during growth at a constant AlN molar fraction can be explained by the increase in the biaxial modulus of Al x Ga1-x N due to impurity doping.Keywords
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