Experimental observation of negative differential resistance from an InAs/GaSb interface
- 13 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (7) , 683-685
- https://doi.org/10.1063/1.103591
Abstract
We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×104 A/cm2 and 4.2×104 A/cm2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively.Keywords
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