Characteristics of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide and Thin-Film-Transistor Application
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S) , 4570-4573
- https://doi.org/10.1143/jjap.31.4570
Abstract
In order to make application to the low-temperature thin-film-transistor (TFT) process possible, the deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was investigated. It was shown that the oxide films with low Si-OH content had good electrical properties: for example, low interface state density of 5×1010 cm-2 eV-1 and high breakdown strength of 8 MV/cm. In addition, polycrystalline-silicon (poly-Si) TFT's employing TEOS-SiO2 films as gate insulators were fabricated and examined. It was confirmed that the TEOS-PECVD method was a promising method for forming gate insulators. This paper reports on TEOS-SiO2 films and poly-Si TFT's.Keywords
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