Magnetic properties of bound hole states for complex neutral defects in semiconductors
- 31 December 1986
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 36 (3) , 149-159
- https://doi.org/10.1016/0022-2313(86)90035-9
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Optical study of complex formation in Ag-doped CdTePhysical Review B, 1986
- Spectroscopy of excitons bound to isoelectronic defect complexes in siliconSolid State Communications, 1985
- Neutral (Cu-Li) complexes in GaP: The (Cu-Libound exciton at 2.306 eVPhysical Review B, 1985
- Photoluminescence studies of the 1.911-eV Cu-related complex in GaPPhysical Review B, 1982
- Optical properties of the Cu-related characteristic-orange-luminescence center in GaPPhysical Review B, 1982
- Binding to Isoelectronic Impurities in SemiconductorsPhysical Review Letters, 1972
- Zeeman Effect and Crystal-Field Splitting of Excitons Bound to Isoelectronic Bismuth in Gallium PhosphidePhysical Review B, 1969
- Optical Properties of Cd-O and Zn-O Complexes in GaPPhysical Review B, 1968
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965