On equilibration processes in GD amorphous silicon, prepared at high substrate temperatures
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 191-194
- https://doi.org/10.1016/s0022-3093(05)80088-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- Very Stable a-Si:H Prepared by “Chemical Annealing”Japanese Journal of Applied Physics, 1991
- Defect formation ina-Si:HPhysical Review B, 1990
- Chemical-equilibrium model of optimala-Si:H growth fromPhysical Review B, 1990
- The defect density in amorphous siliconPhilosophical Magazine Part B, 1989
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Equilibrium temperature and related defects in intrinsic glow discharge amorphous siliconApplied Physics Letters, 1987
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986