Epitaxial liftoff InGaAs/InP MSM photodetectorson Si
- 3 August 1995
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (16) , 1383-1384
- https://doi.org/10.1049/el:19950910
Abstract
InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors for the long wavelength region were transferred by epitaxial liftoff (ELO) techniques onto an Si substrate. The transferred detectors, with a finger spacing and width of 1.5 and 1.0 µm, respectively, showed no deterioration in device performance. A fast impulse response with an FWHM of 23 ps and an external quantum efficiency of 48% was measured at a 7 V bias and 1.3 µm wavelength. The leakage current was 250 nA at a 7 V bias.Keywords
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