The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature
- 1 June 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 159-160, 544-549
- https://doi.org/10.1016/s0169-4332(00)00093-3
Abstract
No abstract availableKeywords
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