High tolerance to radiation effects and low noise performance of ACUTE-a complementary bipolar SOI IC technology
- 1 April 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (2) , 761-768
- https://doi.org/10.1109/23.491526
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistancesIEEE Transactions on Electron Devices, 1994
- Dose-rate effects on radiation-induced bipolar junction transistor gain degradationApplied Physics Letters, 1994
- 1/f noise and radiation effects in MOS devicesIEEE Transactions on Electron Devices, 1994
- Charge separation for bipolar transistorsIEEE Transactions on Nuclear Science, 1993
- Effects of oxide charge and surface recombination velocity on the excess base current of BJTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- The effects of scaling and rapid thermal annealing on the 1/∫ noise of polysilicon emitter bipolar transistorsMicroelectronic Engineering, 1991
- A survey of results and future prospects on quantum noise and noise in generalSolid-State Electronics, 1991
- Quantum 1/f Noise Associated with Intervalley Scattering in Nondegenerate Semiconductors. I. Analytical CalculationsPhysica Status Solidi (b), 1989
- Further comments on Handel's theories of quantum noisePhysica A: Statistical Mechanics and its Applications, 1988
- A theory of the Hooge parameters of solid-state devicesIEEE Transactions on Electron Devices, 1985