Effects of oxide charge and surface recombination velocity on the excess base current of BJTs
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The role of net positive oxide trapped charge and surface recombination velocity on excess base current in bipolar junction transistors (BJTs) is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.Keywords
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