Weak-Beam Contrast from Stacking Faults in Silicon
- 16 November 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 74 (1) , 353-359
- https://doi.org/10.1002/pssa.2210740142
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Comments on weak-beam contrast of stacking faults in transmission electron microscopy /1/Physica Status Solidi (a), 1981
- Weak-beam contrast of stacking faults in transmission electron microscopyPhysica Status Solidi (a), 1980
- {113} Loops in electron-irradiated siliconPhilosophical Magazine A, 1979
- Defects in electron-irradiated germaniumPhilosophical Magazine, 1976
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- The nature of stacking fault pyramids in {100} epitaxial siliconPhysica Status Solidi (a), 1975
- Applications of many beam systematic diffraction contrast in high voltage transmission electron microscopyPhysica Status Solidi (a), 1974
- Stacking-Fault Defects in Epitaxial Silicon LayersJournal of Applied Physics, 1966