Diffusion of implanted beryllium in gallium arsenide as a function of anneal temperature and dose
- 4 September 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (10) , 996-998
- https://doi.org/10.1063/1.101700
Abstract
The diffusion of implanted Be in GaAs was studied by annealing samples of GaAs implanted with low and high doses of Be. The high‐dose (1×1014 cm−2) samples show an increase in diffusion with increasing anneal temperature from 700 to 900 °C. However, the low‐dose (2×1013 cm−2) samples show a decrease in diffusion as the temperature is increased. The temperature dependence of the low‐dose case can be reversed by coimplantation of 1×1014 cm−2 boron. This behavior is explained in terms of the substitutional‐interstitial diffusion mechanism and the relative concentrations of Be interstitials and Be substitutionals for the different cases.Keywords
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