Electrical Profiles of Ion Implanted Silicon and their Comparison with Defect Structures
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICONApplied Physics Letters, 1970
- On the effectiveness of dislocation loops as sites for the adsorption of implanted ionsRadiation Effects, 1970
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970
- Damage produced by ion mplantation in siliconRadiation Effects, 1970
- LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIORApplied Physics Letters, 1969
- Improved profiles of electrical activity in boron implanted siliconPhysics Letters A, 1968
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968