AN IRRADIATION EFFECT IN THERMALLY GROWN SiO2
- 1 January 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (1) , 5-6
- https://doi.org/10.1063/1.1652653
Abstract
Thermally grown silicon dioxide layers were irradiated with kilovolt electrons, and the equilibrium surface potential was measured by passing the secondary electrons through an energy analyser. The incident electrons at 5‐keV energy penetrate for 3300 Å into a 5700‐Å oxide film. The observed equilibrium surface potential is initially less than 1 V which indicates efficient induced conductivity; but after 10 C/cm2 it is −30 V (which indicates that the conductivity has diminished); and finally at 20 C/cm2 it is less than 1 V again. Annealing reverses the process. A model is proposed.Keywords
This publication has 7 references indexed in Scilit:
- Voltage measurement in the scanning electron microscopeJournal of Physics E: Scientific Instruments, 1968
- Selective Electron-Beam Irradiation of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- A model for radiation damage in metal-oxide-semiconductor structuresProceedings of the IEEE, 1966
- Electron bombardment induced conductivity in fused silicaBritish Journal of Applied Physics, 1966
- EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON Si-INSULATED GATE FETsApplied Physics Letters, 1965
- Conductivity Induced by Electron Bombardment in Thin Insulating FilmsPhysical Review B, 1949