Heteroepitaxy of Si, Ge, and GaAs Films on CaF₂/Si Structures

This publication has 10 references indexed in Scilit:

• Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF₂ and GaAs
  Japanese Journal of Applied Physics, 1986
• Use of a rapid anneal to improve CaF2:Si (100) epitaxy
  Applied Physics Letters, 1985
• Fabrication of MOSFETs in Si/CaF ₂ /Si heteroepitaxial structures
  Electronics Letters, 1985
• Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors using molecular beam epitaxy of CaF2 on Si
  Applied Physics Letters, 1984
• Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature
  Journal of Applied Physics, 1984
• Epitaxial relations in group-IIa fluoride/Si(111) heterostructures
  Applied Physics Letters, 1983
• Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures
  Japanese Journal of Applied Physics, 1983
• Epitaxial Growth of Ge Films onto CaF₂/Si Structures
  Japanese Journal of Applied Physics, 1982
• Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
  Applied Physics Letters, 1982
• Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques
  Applied Physics Letters, 1979