Deposition of InP particles on Si3N4 and SiO2 films by low pressure MOCVD
- 1 July 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 84 (1) , 115-122
- https://doi.org/10.1016/0022-0248(87)90117-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- MOVPE growth of SiO2-masked InP structures at reduced pressuresJournal of Crystal Growth, 1986
- Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1986
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Low Pressure Metalorganic Vapor Phase Epitaxy of InP in a Vertical ReactorJournal of the Electrochemical Society, 1985
- Selective area growth of gallium arsenide by metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Selective metalorganic chemical vapour deposition for GaAs planar technologyJournal of Crystal Growth, 1984
- GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applicationsIEEE Electron Device Letters, 1984
- Pyrolysis studies of main group metal‐alkyl bond dissociation energies: VLPP of GeMe4, SbEt3, PbEt4, and PEt3International Journal of Chemical Kinetics, 1983
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981
- THE PYROLYSIS OF TRIMETHYLINDIUMCanadian Journal of Chemistry, 1964