Nondestructive characterization of silicon-on-insulator structures using infrared spectroscopic ellipsometry
- 1 December 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (11) , 5810-5813
- https://doi.org/10.1063/1.346952
Abstract
Nondestructive characterization of a large variety of silicon‐on‐insulator structures has been performed by infrared spectroscopicellipsometry (IRSE). This technique is shown to be applicable over very wide ranges of Si and SiO2 thicknesses and thus is more adapted than visible reflectometry or spectroscopicellipsometry when relatively thick films are analyzed. In addition, IRSE provides information on any possible interface roughness and thickness homogeneity of the layers.This publication has 11 references indexed in Scilit:
- Spectroscopic Ellipsometry for the Characterization of Thin FilmsJournal of the Electrochemical Society, 1990
- Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin-film characterizationReview of Scientific Instruments, 1989
- Mechanics of the silica cap during zone melting of Si filmsJournal of Applied Physics, 1989
- Spectroscopic ellipsometry and transmission electron microscopy study of annealed high-dose oxygen implanted siliconJournal of Applied Physics, 1989
- Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometryMaterials Science and Engineering: B, 1989
- Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometryJournal of Applied Physics, 1987
- Nondestructive analysis of silicon-on-insulator wafersApplied Physics Letters, 1987
- New capping technique for zone-melting recrystallization of silicon-on-insulator filmsApplied Physics Letters, 1986
- Improvement in accuracy of spectroscopic IR ellipsometry by the use of IR retardersInfrared Physics, 1984
- Spectroscopic ellipsometry in the infraredInfrared Physics, 1981