A 23ns 1Mbit BiCMOS DRAM

Publisher Website

1 September 1989

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/esscirc.1989.5468110

Abstract

No abstract available

Keywords

23NS 1MBIT BICMOS DRAM

This publication has 4 references indexed in Scilit:

A 1-Mbit BiCMOS DRAM using temperature-compensation circuit techniques
IEEE Journal of Solid-State Circuits, 1989
A 20-ns 128-kbit*4 high speed DRAM with 330-Mbit/s data rate
IEEE Journal of Solid-State Circuits, 1988
An experimental 1-Mbit BiCMOS DRAM
IEEE Journal of Solid-State Circuits, 1987
Bipolar CMOS merged structure for high speed M bit DRAM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986