Theory and experiments on flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

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Abstract
We studied 1/fγ noise in strained‐layer In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes from 77 to 293 K and observed variations over temperature for both the noise magnitude and the spectral shape. Analyses of our data indicated a thermally activated noise process. Our measurement further showed that the current noise magnitude SI varied approximately as I2 at room temperature, but deviated significantly from an I2 dependence at low temperatures. Such observations are accounted for by a model based on the capture and emission of electrons by interface states through thermal activation. These traps cause fluctuations in the tunneling current by modulating the barrier potential and thus the transmission coefficient.