A Low-Temperature Process for Device Quality Si/SiO2 Interfaces On Si(111)
- 24 October 1993
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 315 (1) , 375-380
- https://doi.org/10.1557/proc-315-375
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Second-harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma-assisted oxidation and deposition processesJournal of Vacuum Science & Technology A, 1993
- Low-temperature formation of device-quality SiO2/Si interfaces by a two-step remote plasma-assisted oxidation/deposition processJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Passivation of (111) Si/SiO2 interface by fluorineApplied Physics Letters, 1992
- Dependence of thin-oxide films quality on surface microroughnessIEEE Transactions on Electron Devices, 1992
- Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition processApplied Physics Letters, 1992
- Scanning Tunneling Microscopy of HF-Controlled Si(111) SurfacesMRS Proceedings, 1992
- Chemical Stability of HF-Treated Si(111) SurfacesJapanese Journal of Applied Physics, 1991
- Homogeneous hydrogen-terminated Si(111) surface formed using aqueous HF solution and waterApplied Physics Letters, 1991
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990